Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
•DC Current Gain − hFE = 20−70 @ IC = 4 Adc •Collector−Emitter Saturation Voltage −VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc•Excellent Safe Operating Area
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
|Collector Current − Continuous||IC||15||Adc|
Transistor NPN 2N3055 ON Characteristics
|DC Current Gain||hFE||−|
|(IC = 4.0 Adc, VCE = 4.0 Vdc)||20||70|
|(IC = 10 Adc, VCE = 4.0 Vdc)||5.0||−|
|Collector−Emitter Saturation Voltage||VCE(sat)||Vdc|
|(IC = 4.0 Adc, IB = 400 mAdc)||−||1.1|
|(IC = 10 Adc, IB = 3.3 Adc)||3.0|
|Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)||VBE(on)||−||1.5||Vdc|